Calculated valence electron density of a silicon nanocrystal. (Image courtesy of Zack Helms, Quantum Simulations Laboratory, North Carolina State University. Simulations completed using computational resources provided by the National Center for Supercomputing Applications. Image provided by the National Science Foundation Image Library.)
Instructor(s)
Prof. Clifton Fonstad, Jr.
MIT Course Number
6.772
As Taught In
Spring 2003
Level
Graduate
Course Description
Course Features
Course Description
This course outlines the physics, modeling, application, and technology of compound semiconductors (primarily III-Vs) in electronic, optoelectronic, and photonic devices and integrated circuits. Topics include: properties, preparation, and processing of compound semiconductors; theory and practice of heterojunctions, quantum structures, and pseudomorphic strained layers; metal-semiconductor field effect transistors (MESFETs); heterojunction field effect transistors (HFETs) and bipolar transistors (HBTs); photodiodes, vertical-and in-plane-cavity laser diodes, and other optoelectronic devices.